600V N-Channel MOSFET, 20A, 165mR, TO-220 Product overview: STP26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP26NM60N can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 20A TO220AB
N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 031465-STP26NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: STP26NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): FCP165N65S3; IPP60R199CP; IPP60R299CP;
Introduction Date: April 29, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Safety
MOSFET, N-CH, 600V, 10A, 150DEG C, 140W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; Product Range:- RoHS Compliant: Yes
600V 20A 140W 165mΩ@10V,10A 4V@250uA N Channel TO-220 MOSFETs ROHS
MOSFET N-CH 600V 20A TO220AB
MOSFET N-channel 600 V Mdmesh II Power
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STP26NM60N | 7610083 | STP26NM60N | 497-9064-5-ND | 031465-STP26NM60N | 26R7055 | STP26NM60N | STP26NM60N | STP26NM60N |
| Product Name | N-Channel 600V 20A TO-220 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP26NM60N | Mosfet, N-Ch, 600V, 10A, 150Deg C, 140W; Channel Type Stmicroelectronics | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 140000 milliwatts | 140000 milliwatts | 140000 milliwatts | 140000 milliwatts | 140000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Package Type | TO-220; To-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3 | TO-220 | 60 nC @ 10 V |
