STMicroelectronics, Inc. Single FETs, MOSFETs STP26NM60N

Description
MOSFET N-CH 600V 20A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 600V 20A TO220AB
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP26NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP26NM60N
Single FETs, MOSFETs STP26NM60N
MOSFET N-CH 600V 20A TO220AB

MOSFET N-CH 600V 20A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP26NM60N - 031465-STP26NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP26NM60N
031465-STP26NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP26NM60N 031465-STP26NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031465-STP26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: STP26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): FCP165N65S3; IPP60R199CP; IPP60R299CP; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Safety

Manufacturer: STMicroelectronics
Win Source Part Number: 031465-STP26NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: STP26NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): FCP165N65S3; IPP60R199CP; IPP60R299CP;
Introduction Date: April 29, 2009
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Safety

Buy Now Datasheet
Single FETs, MOSFETs - 497-9064-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-9064-5-ND
Single FETs, MOSFETs 497-9064-5-ND
N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-220

N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-220

Buy Now Datasheet
MOSFETs - 7610083 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610083
MOSFETs 7610083
MOSFET N-Channel 600V 20A TO220

MOSFET N-Channel 600V 20A TO220

Supplier's Site
MOSFETs - 1687500 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687500
MOSFETs 1687500
MOSFET N-Channel 600V 20A TO220

MOSFET N-Channel 600V 20A TO220

Supplier's Site
Singapore
N-Channel 600V 20A TO-220 MOSFET Transistor
278-STP26NM60N
N-Channel 600V 20A TO-220 MOSFET Transistor 278-STP26NM60N
600V N-Channel MOSFET, 20A, 165mR, TO-220 Product overview: STP26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP26NM60N can be used for catalog matching and distributor lookup.

600V N-Channel MOSFET, 20A, 165mR, TO-220 Product overview: STP26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP26NM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP26NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP26NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP26NM60N
MOSFET N-CH 600V 20A TO220AB

MOSFET N-CH 600V 20A TO220AB

Supplier's Site
Mosfet, N-Ch, 600V, 10A, 150Deg C, 140W; Channel Type Stmicroelectronics - 26R7055 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 10A, 150Deg C, 140W; Channel Type Stmicroelectronics
26R7055
Mosfet, N-Ch, 600V, 10A, 150Deg C, 140W; Channel Type Stmicroelectronics 26R7055
MOSFET, N-CH, 600V, 10A, 150DEG C, 140W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; Product Range:- RoHS Compliant: Yes

MOSFET, N-CH, 600V, 10A, 150DEG C, 140W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; Product Range:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V Mdmesh II Power

MOSFET N-channel 600 V Mdmesh II Power

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STP26NM60N
Triode/MOS Tube/Transistor >> MOSFETs STP26NM60N
600V 20A 140W 165mΩ@10V,10A 4V@250uA N Channel TO-220 MOSFETs ROHS

600V 20A 140W 165mΩ@10V,10A 4V@250uA N Channel TO-220 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP26NM60N 031465-STP26NM60N 497-9064-5-ND 7610083 278-STP26NM60N STP26NM60N 26R7055 STP26NM60N STP26NM60N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP26NM60N Single FETs, MOSFETs MOSFETs N-Channel 600V 20A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 10A, 150Deg C, 140W; Channel Type Stmicroelectronics MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 20000 milliamps 10000 milliamps
PD 140000 milliwatts 140000 milliwatts 140000 milliwatts 140000 milliwatts 140000 milliwatts
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