MOSFET N-CH 600V 18A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 935553-STP26N60DM6
Series: MDmesh™ DM6
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 18A (Tc) 130W (Tc) Through Hole TO-220
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: STP26
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 350
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 600V 18A (Tc) 130W (Tc) Through Hole TO-220
MOSFET N-CH 600V 18A TO220
MOSFET, N-CH, 600V, 18A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.195ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation RoHS Compliant: Yes
MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220 package
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP26N60DM6 | 935553-STP26N60DM6 | 497-18499-ND | 1924661 | 1924925P | STP26N60DM6 | 03AH3153 | STP26N60DM6 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP26N60DM6 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-220; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 600 volts | |||||||
| IDSS | 18000 milliamps | 18000 milliamps | ||||||
| PD | 130000 milliwatts |
