STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM60ND STP25NM60ND

Description
Manufacturer: STMicroelectronics Win Source Part Number: 026251-STP25NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 2400pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 026251-STP25NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 2400pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM60ND - 026251-STP25NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM60ND
026251-STP25NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM60ND 026251-STP25NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 026251-STP25NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 2400pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 026251-STP25NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - STP25NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP25NM60ND
Single FETs, MOSFETs STP25NM60ND
MOSFET N-CH 600V 21A TO220AB

MOSFET N-CH 600V 21A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-8446-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8446-5-ND
Single FETs, MOSFETs 497-8446-5-ND
N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-220

N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP25NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP25NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP25NM60ND
MOSFET N-CH 600V 21A TO220AB

MOSFET N-CH 600V 21A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600V, 21A FDMesh II

MOSFET N-channel 600V, 21A FDMesh II

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 026251-STP25NM60ND STP25NM60ND 497-8446-5-ND STP25NM60ND STP25NM60ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM60ND Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 160000 milliwatts 160000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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