STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM50N STP25NM50N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212358-STP25NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 2565pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM50N - 212358-STP25NM50N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-4672-5-ND - DigiKey
    DigiKey
  • Transistor - 16463257 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP25NM50N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 500V, 22A, To-220; Channel Type Stmicroelectronics - 37M6935 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 212358-STP25NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 2565pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM50N - 212358-STP25NM50N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM50N
212358-STP25NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM50N 212358-STP25NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 212358-STP25NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 2565pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212358-STP25NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 2565pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now
Single FETs, MOSFETs - 497-4672-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4672-5-ND
Single FETs, MOSFETs 497-4672-5-ND
N-Channel 500V 22A (Tc) 160W (Tc) Through Hole TO-220

N-Channel 500V 22A (Tc) 160W (Tc) Through Hole TO-220

Buy Now Datasheet
Transistor - 16463257 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16463257
Transistor 16463257
N CHANNEL MOSFET, 500V, 22A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:22A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 500V, 22A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:22A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP25NM50N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP25NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP25NM50N
MOSFET N-CH 500V 22A TO220AB

MOSFET N-CH 500V 22A TO220AB

Supplier's Site
N Channel Mosfet, 500V, 22A, To-220; Channel Type Stmicroelectronics - 37M6935 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 500V, 22A, To-220; Channel Type Stmicroelectronics
37M6935
N Channel Mosfet, 500V, 22A, To-220; Channel Type Stmicroelectronics 37M6935
N CHANNEL MOSFET, 500V, 22A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:25V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 500V, 22A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:25V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212358-STP25NM50N 497-4672-5-ND 16463257 STP25NM50N 37M6935
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25NM50N Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 500V, 22A, To-220; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 160000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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