N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package Product overview: STP25N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.175 Ohm, 18 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.175 Ohm, 18 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP25N60M2-EP can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 18A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 898319-STP25N60M2-EP
Series: MDmesh™ M2-EP
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 18A (Tc) 150W (Tc) Through Hole TO-220
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: STP25
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package
MOSFET N-CH 600V 18A TO220
MOSFET, N-CH, 600V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15892-5-ND | 278-STP25N60M2-EP | STP25N60M2-EP | 898319-STP25N60M2-EP | STP25N60M2-EP | STP25N60M2-EP | 45AC7713 |
| Product Name | Single FETs, MOSFETs | N-Channel 600 V 0.175 Ohm 18 A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25N60M2-EP | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-220Ab; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts |
