MOSFET N-CH 600V 18A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 898319-STP25N60M2-EP
Series: MDmesh™ M2-EP
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 18A (Tc) 150W (Tc) Through Hole TO-220
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: STP25
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package Product overview: STP25N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.175 Ohm, 18 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.175 Ohm, 18 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP25N60M2-EP can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 600V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 18A TO220
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP25N60M2-EP | 898319-STP25N60M2-EP | 497-15892-5-ND | 278-STP25N60M2-EP | 45AC7713 | STP25N60M2-EP | STP25N60M2-EP |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP25N60M2-EP | Single FETs, MOSFETs | N-Channel 600 V 0.175 Ohm 18 A MOSFET Transistor | Mosfet, N-Ch, 600V, 18A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 18000 milliamps | 18000 milliamps |