N-Channel 600V 17A (Tj) Through Hole TO-220
MOSFET N-CH 600V TO220
N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package Product overview: STP24N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 162 mOhm, 17 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 162 mOhm, 17 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP24N60M6 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1356520-STP24N60M6
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 31 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Series: MDmesh™ M6
Package: Tube
Product Status: Active
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Product Number: STP24
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Power Dissipation (Max): 130W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET N-CH 600V TO220
MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220 package
MOSFET, N-CH, 600V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:-; RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-18249-ND | STP24N60M6 | 278-STP24N60M6 | 1356520-STP24N60M6 | STP24N60M6 | STP24N60M6 | 84AC2936 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 600 V 162 mOhm 17 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, To-220; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | 10V | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 17000 milliamps |
