STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM60ND STP23NM60ND

Description
Manufacturer: STMicroelectronics Win Source Part Number: 143804-STP23NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 19.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 2100pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 143804-STP23NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 19.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 2100pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM60ND - 143804-STP23NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM60ND
143804-STP23NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM60ND 143804-STP23NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 143804-STP23NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 19.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 2100pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 143804-STP23NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 19.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 2100pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - 497-8445-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8445-5-ND
Single FETs, MOSFETs 497-8445-5-ND
N-Channel 600V 19.5A (Tc) 150W (Tc) Through Hole TO-220

N-Channel 600V 19.5A (Tc) 150W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP23NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP23NM60ND
Single FETs, MOSFETs STP23NM60ND
MOSFET N-CH 600V 19.5A TO220AB

MOSFET N-CH 600V 19.5A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP23NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP23NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP23NM60ND
MOSFET N-CH 600V 19.5A TO220AB

MOSFET N-CH 600V 19.5A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 143804-STP23NM60ND 497-8445-5-ND STP23NM60ND STP23NM60ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM60ND Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 150000 milliwatts 150000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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