Manufacturer: STMicroelectronics
Win Source Part Number: 037482-STP23NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 19.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 2100pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 50
N-Channel 600V 19A (Tc) 150W (Tc) Through Hole TO-220
MOSFET N-CH 600V 19A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 037482-STP23NM60N | 497-7517-5-ND | STP23NM60N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP23NM60N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 600 volts | ||
| PD | 150000 milliwatts |
