MOSFET N-CH 600V 16A TO220AB
N-Channel 600V 16A (Tc) 125W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 053924-STP22NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1300pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 220 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
600V 16A 220mΩ@8A,10V 125W 4V@100uA null TO-220-3 MOSFETs ROHS
MOSFET, N CH, 600V, 16A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-channel 600 V 0.190ohm 16A Mdmesh
N-channel 600 V, 0.2 Ohm, 16 A
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP22NM60N | 497-10306-5-ND | 053924-STP22NM60N | STP22NM60N | 55R7008 | STP22NM60N | STP22NM60N |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP22NM60N | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N Ch, 600V, 16A, To-220; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | ||||
| IDSS | 16000 milliamps | 16000 milliamps | |||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts |
