STMicroelectronics, Inc. Single FETs, MOSFETs STP220N6F7

Description
N-Channel 60V 120A (Tc) 237W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 60V 120A (Tc) 237W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-16120-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16120-5-ND
Single FETs, MOSFETs 497-16120-5-ND
N-Channel 60V 120A (Tc) 237W (Tc) Through Hole TO-220

N-Channel 60V 120A (Tc) 237W (Tc) Through Hole TO-220

Buy Now Datasheet
Singapore
N-Channel 60 V 0.0021 mOhm 120 A MOSFET Transistor
278-STP220N6F7
N-Channel 60 V 0.0021 mOhm 120 A MOSFET Transistor 278-STP220N6F7
N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package Product overview: STP220N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 0.0021 mOhm, 120 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 0.0021 mOhm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP220N6F7 can be used for catalog matching and distributor lookup.

N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package Product overview: STP220N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 0.0021 mOhm, 120 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 0.0021 mOhm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP220N6F7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STP220N6F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP220N6F7
Single FETs, MOSFETs STP220N6F7
MOSFET N-CH 60V 120A TO220

MOSFET N-CH 60V 120A TO220

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7 - 138174-STP220N6F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7
138174-STP220N6F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7 138174-STP220N6F7
Manufacturer: STMicroelectronics Win Source Part Number: 138174-STP220N6F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 237W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 6400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 138174-STP220N6F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 237W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 6400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

MOSFET N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP220N6F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP220N6F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP220N6F7
MOSFET N-CH 60V 120A TO220

MOSFET N-CH 60V 120A TO220

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-16120-5-ND 278-STP220N6F7 STP220N6F7 138174-STP220N6F7 STP220N6F7 STP220N6F7
Product Name Single FETs, MOSFETs N-Channel 60 V 0.0021 mOhm 120 A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
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