STMicroelectronics, Inc. Single FETs, MOSFETs STP220N6F7

Description
MOSFET N-CH 60V 120A TO220
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Description
MOSFET N-CH 60V 120A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP220N6F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP220N6F7
Single FETs, MOSFETs STP220N6F7
MOSFET N-CH 60V 120A TO220

MOSFET N-CH 60V 120A TO220

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-16120-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16120-5-ND
Single FETs, MOSFETs 497-16120-5-ND
N-Channel 60V 120A (Tc) 237W (Tc) Through Hole TO-220

N-Channel 60V 120A (Tc) 237W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7 - 138174-STP220N6F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7
138174-STP220N6F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7 138174-STP220N6F7
Manufacturer: STMicroelectronics Win Source Part Number: 138174-STP220N6F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 237W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 6400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 138174-STP220N6F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 237W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 6400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

MOSFET N-channel 60 V, 0.0021 mOhm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP220N6F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP220N6F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP220N6F7
MOSFET N-CH 60V 120A TO220

MOSFET N-CH 60V 120A TO220

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STP220N6F7 497-16120-5-ND 138174-STP220N6F7 STP220N6F7 STP220N6F7
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP220N6F7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 120000 milliamps
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