STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP21N65M5 STP21N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 005488-STP21N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1950pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 005488-STP21N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1950pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP21N65M5 - 005488-STP21N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP21N65M5
005488-STP21N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP21N65M5 005488-STP21N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 005488-STP21N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1950pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 005488-STP21N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1950pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-STP21N65M5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STP21N65M5-ND
Single FETs, MOSFETs 497-STP21N65M5-ND
N-Channel 650V 17A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 650V 17A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
Singapore
650V 17A TO-220 MOSFET Transistor
278-STP21N65M5
650V 17A TO-220 MOSFET Transistor 278-STP21N65M5
650V 17A N-CH MOSFET TO-220 150mR Power Transistor Product overview: STP21N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP21N65M5 can be used for catalog matching and distributor lookup.

650V 17A N-CH MOSFET TO-220 150mR Power Transistor Product overview: STP21N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 17A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 17A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP21N65M5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 650 V MDMesh M5

MOSFET N-channel 650 V MDMesh M5

Buy Now Datasheet
Mosfet, N Ch, 650V, 17A, To-220; Channel Type Stmicroelectronics - 55R7007 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 650V, 17A, To-220; Channel Type Stmicroelectronics
55R7007
Mosfet, N Ch, 650V, 17A, To-220; Channel Type Stmicroelectronics 55R7007
MOSFET, N CH, 650V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 650V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP21N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP21N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP21N65M5
MOSFET N-CH 650V 17A TO220AB

MOSFET N-CH 650V 17A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 005488-STP21N65M5 497-STP21N65M5-ND 278-STP21N65M5 STP21N65M5 55R7007 STP21N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP21N65M5 Single FETs, MOSFETs 650V 17A TO-220 MOSFET Transistor MOSFET Mosfet, N Ch, 650V, 17A, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts
PD 125000 milliwatts 125000 milliwatts
TJ 150 C (302 F) -55 C (-67 F)
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