N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1103665-STP20N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1345pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
650V N-CH MOSFET 18A 190mR TO-220 Power Transistor Product overview: STP20N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 18A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 18A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP20N65M5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 18A TO220
MOSFET N-CH 650V 18A TO220
MOSFET, N-CH, 650V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13538-ND | 1103665-STP20N65M5 | 278-STP20N65M5 | STP20N65M5 | STP20N65M5 | 45AC7706 | STP20N65M5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP20N65M5 | 650V 18A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 18A, To-220Ab; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 130000 milliwatts | 130000 milliwatts | 130000 milliwatts |
