STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP19NB20 STP19NB20

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054257-STP19NB20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): FQP19N20C; PHP18N20E; IRF640; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 054257-STP19NB20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): FQP19N20C; PHP18N20E; IRF640; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP19NB20 - 054257-STP19NB20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP19NB20
054257-STP19NB20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP19NB20 054257-STP19NB20
Manufacturer: STMicroelectronics Win Source Part Number: 054257-STP19NB20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 9.5A, 10V Alternative Parts (Cross-Reference): FQP19N20C; PHP18N20E; IRF640; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 054257-STP19NB20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): FQP19N20C; PHP18N20E; IRF640;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-2650-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2650-5-ND
Single FETs, MOSFETs 497-2650-5-ND
N-Channel 200V 19A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 200V 19A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP19NB20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP19NB20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP19NB20
MOSFET N-CH 200V 19A TO220AB

MOSFET N-CH 200V 19A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 054257-STP19NB20 497-2650-5-ND STP19NB20
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP19NB20 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 125000 milliwatts
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