Manufacturer: STMicroelectronics
Win Source Part Number: 054256-STP180N10F3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 114.6nC @ 10V
Max Input Capacitance: 6665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): TK100E10N1,S1X; TSM160N10CZ C0; IPP120N10S403AKSA1;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 120A TO220
MOSFET N-Ch 100V 3.9 mOhm 180A STripFET
MOSFET N-CH 100V 120A TO220
| Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 054256-STP180N10F3 | STP180N10F3 | STP180N10F3 | STP180N10F3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP180N10F3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | ||
| PD | 315000 milliwatts | 315000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
