STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP180N10F3 STP180N10F3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054256-STP180N10F3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 315W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114.6nC @ 10V Max Input Capacitance: 6665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): TK100E10N1,S1X; TSM160N10CZ C0; IPP120N10S403AKSA1; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 054256-STP180N10F3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 315W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114.6nC @ 10V Max Input Capacitance: 6665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): TK100E10N1,S1X; TSM160N10CZ C0; IPP120N10S403AKSA1; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP180N10F3 - 054256-STP180N10F3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP180N10F3
054256-STP180N10F3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP180N10F3 054256-STP180N10F3
Manufacturer: STMicroelectronics Win Source Part Number: 054256-STP180N10F3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 315W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114.6nC @ 10V Max Input Capacitance: 6665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): TK100E10N1,S1X; TSM160N10CZ C0; IPP120N10S403AKSA1; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054256-STP180N10F3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 114.6nC @ 10V
Max Input Capacitance: 6665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): TK100E10N1,S1X; TSM160N10CZ C0; IPP120N10S403AKSA1;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
100V 120A TO-220 MOSFET Transistor
278-STP180N10F3
100V 120A TO-220 MOSFET Transistor 278-STP180N10F3
N-Ch MOSFET 100V 120A 4.5mR TO-220 Power Product overview: STP180N10F3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP180N10F3 can be used for catalog matching and distributor lookup.

N-Ch MOSFET 100V 120A 4.5mR TO-220 Power Product overview: STP180N10F3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP180N10F3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STP180N10F3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP180N10F3
Single FETs, MOSFETs STP180N10F3
MOSFET N-CH 100V 120A TO220

MOSFET N-CH 100V 120A TO220

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP180N10F3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP180N10F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP180N10F3
MOSFET N-CH 100V 120A TO220

MOSFET N-CH 100V 120A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 3.9 mOhm 180A STripFET

MOSFET N-Ch 100V 3.9 mOhm 180A STripFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 054256-STP180N10F3 278-STP180N10F3 STP180N10F3 STP180N10F3 STP180N10F3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP180N10F3 100V 120A TO-220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 315000 milliwatts 315000 milliwatts 315000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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