STMicroelectronics, Inc. Single FETs, MOSFETs STP17NF25

Description
MOSFET N-CH 250V 17A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 250V 17A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP17NF25 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP17NF25
Single FETs, MOSFETs STP17NF25
MOSFET N-CH 250V 17A TO220AB

MOSFET N-CH 250V 17A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-7511-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7511-5-ND
Single FETs, MOSFETs 497-7511-5-ND
N-Channel 250V 17A (Tc) 90W (Tc) Through Hole TO-220

N-Channel 250V 17A (Tc) 90W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP17NF25 - 038607-STP17NF25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP17NF25
038607-STP17NF25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP17NF25 038607-STP17NF25
Manufacturer: STMicroelectronics Win Source Part Number: 038607-STP17NF25 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29.5nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 165 mOhm @ 8.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 038607-STP17NF25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29.5nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 165 mOhm @ 8.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 250V STripFET II Mosfet

MOSFET N-channel 250V STripFET II Mosfet

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP17NF25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP17NF25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP17NF25
MOSFET N-CH 250V 17A TO220AB

MOSFET N-CH 250V 17A TO220AB

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STP17NF25 497-7511-5-ND 038607-STP17NF25 STP17NF25 STP17NF25
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP17NF25 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 250 volts 250 volts
IDSS 17000 milliamps
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