N-channel 80 V, 0.003 Ohm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package Product overview: STP170N8F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 0.003 Ohm, 120 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 0.003 Ohm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP170N8F7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 120A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261688-STP170N8F7
Series: STripFET F7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: STP170N8F7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8710pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.9 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): IPP08CNE8N G; IPP04CNE8NGXK; IPP08CNE8N GXK;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
MOSFET N-channel 80 V, 0.003 Ohm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package
MOSFET, N-CH, 80V, 120A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
MOSFET N-CH 80V 120A TO220
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STP170N8F7 | STP170N8F7 | 1261688-STP170N8F7 | STP170N8F7 | 45AC7702 | STP170N8F7 |
| Product Name | N-Channel 80 V 0.003 Ohm 120 A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP170N8F7 | MOSFET | Mosfet, N-Ch, 80V, 120A, To-220; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel; N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
