STMicroelectronics, Inc. Single FETs, MOSFETs STP16NF06FP

Description
N-Channel 60V 11A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 60V 11A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP16NF06FP-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STP16NF06FP-ND
Single FETs, MOSFETs STP16NF06FP-ND
N-Channel 60V 11A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 60V 11A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16NF06FP - 212350-STP16NF06FP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16NF06FP
212350-STP16NF06FP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16NF06FP 212350-STP16NF06FP
Manufacturer: STMicroelectronics Win Source Part Number: 212350-STP16NF06FP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 315pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Power Management

Manufacturer: STMicroelectronics
Win Source Part Number: 212350-STP16NF06FP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 315pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP16NF06FP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP16NF06FP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP16NF06FP
MOSFET N-CH 60V 11A TO220FP

MOSFET N-CH 60V 11A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STP16NF06FP-ND 212350-STP16NF06FP STP16NF06FP
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16NF06FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 60 volts
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