STMicroelectronics, Inc. Single FETs, MOSFETs STP16N65M5

Description
MOSFET N-CH 650V 12A TO220-3
  • Single FETs, MOSFETs - STP16N65M5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16N65M5 - 037367-STP16N65M5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-8788-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP16N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Ch, 650V, 12A, To-220; Channel Type Stmicroelectronics - 09R6081 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 650V 12A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP16N65M5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP16N65M5
Single FETs, MOSFETs STP16N65M5
MOSFET N-CH 650V 12A TO220-3

MOSFET N-CH 650V 12A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16N65M5 - 037367-STP16N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16N65M5
037367-STP16N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16N65M5 037367-STP16N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 037367-STP16N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1250pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 299 mOhm @ 6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 037367-STP16N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1250pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 299 mOhm @ 6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-8788-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8788-5-ND
Single FETs, MOSFETs 497-8788-5-ND
N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220

N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP16N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP16N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP16N65M5
MOSFET N-CH 650V 12A TO220-3

MOSFET N-CH 650V 12A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STP16N65M5
MOSFET STP16N65M5
MOSFET N-Ch 650 Volt 12 Amp

MOSFET N-Ch 650 Volt 12 Amp

Buy Now Datasheet
Mosfet, N Ch, 650V, 12A, To-220; Channel Type Stmicroelectronics - 09R6081 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 650V, 12A, To-220; Channel Type Stmicroelectronics
09R6081
Mosfet, N Ch, 650V, 12A, To-220; Channel Type Stmicroelectronics 09R6081
MOSFET, N CH, 650V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 650V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP16N65M5 037367-STP16N65M5 497-8788-5-ND STP16N65M5 STP16N65M5 09R6081
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP16N65M5 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Ch, 650V, 12A, To-220; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 12000 milliamps 12000 milliamps
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