Manufacturer: STMicroelectronics
Win Source Part Number: 1001591-STP15N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 810pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 340 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N CH 650V 11A TO220
N-Channel 650V 11A (Tc) 125W (Tc) Through Hole TO-220
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
MOSFET N CH 650V 11A TO220
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1001591-STP15N65M5 | STP15N65M5 | 497-12936-5-ND | STP15N65M5 | STP15N65M5 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N65M5 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | 650 volts | |||
| PD | 125000 milliwatts | 125000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |