STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N65M5 STP15N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1001591-STP15N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 810pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 340 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1001591-STP15N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 810pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 340 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N65M5 - 1001591-STP15N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N65M5
1001591-STP15N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N65M5 1001591-STP15N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1001591-STP15N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 810pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 340 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1001591-STP15N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 810pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 340 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STP15N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP15N65M5
Single FETs, MOSFETs STP15N65M5
MOSFET N CH 650V 11A TO220

MOSFET N CH 650V 11A TO220

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-12936-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12936-5-ND
Single FETs, MOSFETs 497-12936-5-ND
N-Channel 650V 11A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 650V 11A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS

MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP15N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP15N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP15N65M5
MOSFET N CH 650V 11A TO220

MOSFET N CH 650V 11A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1001591-STP15N65M5 STP15N65M5 497-12936-5-ND STP15N65M5 STP15N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N65M5 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
PD 125000 milliwatts 125000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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