STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N60M2-EP STP15N60M2-EP

Description
Manufacturer: STMicroelectronics Win Source Part Number: 795769-STP15N60M2-EP Series: MDmesh M2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Family Name: STP15N60M2-EP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 590pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 110W (Tc) Rds On (Maximum) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPP60R380P6XKSA1; IPP60R380P6; TK12D60U; TK12D60U(Q); Introduction Date: August 26, 2015 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2035 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 795769-STP15N60M2-EP Series: MDmesh M2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Family Name: STP15N60M2-EP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 590pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 110W (Tc) Rds On (Maximum) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPP60R380P6XKSA1; IPP60R380P6; TK12D60U; TK12D60U(Q); Introduction Date: August 26, 2015 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2035 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N60M2-EP - 795769-STP15N60M2-EP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N60M2-EP
795769-STP15N60M2-EP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N60M2-EP 795769-STP15N60M2-EP
Manufacturer: STMicroelectronics Win Source Part Number: 795769-STP15N60M2-EP Series: MDmesh M2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Family Name: STP15N60M2-EP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 590pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 110W (Tc) Rds On (Maximum) @ Id, Vgs: 378 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPP60R380P6XKSA1; IPP60R380P6; TK12D60U; TK12D60U(Q); Introduction Date: August 26, 2015 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2035 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 795769-STP15N60M2-EP
Series: MDmesh M2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Family Name: STP15N60M2-EP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 590pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 378 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPP60R380P6XKSA1; IPP60R380P6; TK12D60U; TK12D60U(Q);
Introduction Date: August 26, 2015
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2035
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STP15N60M2-EP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP15N60M2-EP
Single FETs, MOSFETs STP15N60M2-EP
MOSFET N-CH 600V 11A TO220

MOSFET N-CH 600V 11A TO220

Supplier's Site
Single FETs, MOSFETs - 497-15891-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15891-5-ND
Single FETs, MOSFETs 497-15891-5-ND
N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-220

N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP15N60M2-EP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP15N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP15N60M2-EP
MOSFET N-CH 600V 11A TO220

MOSFET N-CH 600V 11A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

MOSFET N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package

Buy Now Datasheet
Mosfet, N-Ch, 600V, 11A, 150Deg C, 110W Rohs Compliant Stmicroelectronics - 69AH2844 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, 150Deg C, 110W Rohs Compliant Stmicroelectronics
69AH2844
Mosfet, N-Ch, 600V, 11A, 150Deg C, 110W Rohs Compliant Stmicroelectronics 69AH2844
MOSFET, N-CH, 600V, 11A, 150DEG C, 110W ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 11A, 150DEG C, 110W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 795769-STP15N60M2-EP STP15N60M2-EP 497-15891-5-ND STP15N60M2-EP STP15N60M2-EP 69AH2844
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP15N60M2-EP Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 11A, 150Deg C, 110W Rohs Compliant Stmicroelectronics
PD 110000 milliwatts 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3
Packing Method Tube; Tube Tube; Tube
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