STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP150N10F7 STP150N10F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212347-STP150N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 117nC @ 10V Max Input Capacitance: 8115pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 212347-STP150N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 117nC @ 10V Max Input Capacitance: 8115pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP150N10F7 - 212347-STP150N10F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP150N10F7
212347-STP150N10F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP150N10F7 212347-STP150N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 212347-STP150N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 117nC @ 10V Max Input Capacitance: 8115pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212347-STP150N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 117nC @ 10V
Max Input Capacitance: 8115pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-14570-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14570-5-ND
Single FETs, MOSFETs 497-14570-5-ND
N-Channel 100V 110A (Tc) 250W (Tc) Through Hole TO-220

N-Channel 100V 110A (Tc) 250W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP150N10F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP150N10F7
Single FETs, MOSFETs STP150N10F7
MOSFET N-CH 100V 110A TO220

MOSFET N-CH 100V 110A TO220

Supplier's Site Datasheet
Singapore
N-Channel 100 V 0.0036 Ohm 110 A MOSFET Transistor
278-STP150N10F7
N-Channel 100 V 0.0036 Ohm 110 A MOSFET Transistor 278-STP150N10F7
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package Product overview: STP150N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 0.0036 Ohm, 110 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 0.0036 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP150N10F7 can be used for catalog matching and distributor lookup.

N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package Product overview: STP150N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 0.0036 Ohm, 110 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 0.0036 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP150N10F7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 110A, To-220; Channel Type Stmicroelectronics - 45AC7696 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 110A, To-220; Channel Type Stmicroelectronics
45AC7696
Mosfet, N-Ch, 100V, 110A, To-220; Channel Type Stmicroelectronics 45AC7696
MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP150N10F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP150N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP150N10F7
MOSFET N-CH 100V 110A TO220

MOSFET N-CH 100V 110A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 0.0036Ohm typ. 110A

MOSFET N-Ch 100V 0.0036Ohm typ. 110A

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212347-STP150N10F7 497-14570-5-ND STP150N10F7 278-STP150N10F7 45AC7696 STP150N10F7 STP150N10F7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP150N10F7 Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 100 V 0.0036 Ohm 110 A MOSFET Transistor Mosfet, N-Ch, 100V, 110A, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 250000 milliwatts 250000 milliwatts 250000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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