Manufacturer: STMicroelectronics
Win Source Part Number: 212347-STP150N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 117nC @ 10V
Max Input Capacitance: 8115pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
N-Channel 100V 110A (Tc) 250W (Tc) Through Hole TO-220
MOSFET N-CH 100V 110A TO220
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package Product overview: STP150N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 0.0036 Ohm, 110 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 0.0036 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP150N10F7 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
MOSFET N-CH 100V 110A TO220
MOSFET N-Ch 100V 0.0036Ohm typ. 110A
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 212347-STP150N10F7 | 497-14570-5-ND | STP150N10F7 | 278-STP150N10F7 | 45AC7696 | STP150N10F7 | STP150N10F7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP150N10F7 | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100 V 0.0036 Ohm 110 A MOSFET Transistor | Mosfet, N-Ch, 100V, 110A, To-220; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |