STMicroelectronics, Inc. Single FETs, MOSFETs STP12N65M5

Description
N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10304-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10304-5-ND
Single FETs, MOSFETs 497-10304-5-ND
N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP12N65M5 - 1085335-STP12N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP12N65M5
1085335-STP12N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP12N65M5 1085335-STP12N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1085335-STP12N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 900pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V Alternative Parts (Cross-Reference): NTP8G202NG; STP13N65M2; STP12N65M5; STP11NM65N; Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1085335-STP12N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 900pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): NTP8G202NG; STP13N65M2; STP12N65M5; STP11NM65N;
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
650V 8.5A TO-220 MOSFET Transistor
278-STP12N65M5
650V 8.5A TO-220 MOSFET Transistor 278-STP12N65M5
650V 8.5A N-CH MOSFET TO-220 390mR Product overview: STP12N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP12N65M5 can be used for catalog matching and distributor lookup.

650V 8.5A N-CH MOSFET TO-220 390mR Product overview: STP12N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 8.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 8.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP12N65M5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP12N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP12N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP12N65M5
MOSFET N-CH 650V 8.5A TO220AB

MOSFET N-CH 650V 8.5A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 650 V 0.370ohm 8.5A Mdmesh

MOSFET N-channel 650 V 0.370ohm 8.5A Mdmesh

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-10304-5-ND 1085335-STP12N65M5 278-STP12N65M5 STP12N65M5 STP12N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP12N65M5 650V 8.5A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 650 volts
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