Manufacturer: STMicroelectronics
Win Source Part Number: 1085335-STP12N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 900pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 430 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): NTP8G202NG; STP13N65M2; STP12N65M5; STP11NM65N;
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
N-Channel 650V 8.5A (Tc) 70W (Tc) Through Hole TO-220
MOSFET N-channel 650 V 0.370ohm 8.5A Mdmesh
MOSFET N-CH 650V 8.5A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1085335-STP12N65M5 | 497-10304-5-ND | STP12N65M5 | STP12N65M5 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP12N65M5 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | |||
| PD | 70000 milliwatts |
