MOSFET N-CH 1200V 12A TO220
N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package Product overview: STP12N120K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1200 V, 0.62 Ohm, 12 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 0.62 Ohm, 12 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP12N120K5 can be used for catalog matching and distributor lookup.
N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261664-STP12N120K5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 12A
Rds On (Maximum) at Id, Vgs: 690mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 44.2nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V
MOSFET N-CH 1200V 12A TO220
MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package
MOSFET, N-CH, 1.2KV, 12A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP12N120K5 | 278-STP12N120K5 | 497-STP12N120K5-ND | 1261664-STP12N120K5 | STP12N120K5 | STP12N120K5 | 45AC7690 |
| Product Name | Single FETs, MOSFETs | N-Channel 1200 V 0.62 Ohm 12 A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STP12N120K5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.2Kv, 12A, To-220Ab; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 1200 volts | 1200 volts | |||||
| IDSS | 12000 milliamps | 12000 milliamps |
