STMicroelectronics, Inc. Single FETs, MOSFETs STP12N120K5

Description
MOSFET N-CH 1200V 12A TO220
  • Single FETs, MOSFETs - STP12N120K5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - STP12N120K5 - 1261664-STP12N120K5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-STP12N120K5-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 1.2Kv, 12A, To-220Ab; Channel Type Stmicroelectronics - 45AC7690 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP12N120K5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 1200V 12A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP12N120K5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP12N120K5
Single FETs, MOSFETs STP12N120K5
MOSFET N-CH 1200V 12A TO220

MOSFET N-CH 1200V 12A TO220

Supplier's Site Datasheet
FETs - Single - STP12N120K5 - 1261664-STP12N120K5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP12N120K5
1261664-STP12N120K5
FETs - Single - STP12N120K5 1261664-STP12N120K5
Manufacturer: STMicroelectronics Win Source Part Number: 1261664-STP12N120K5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 250W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 12A Rds On (Maximum) at Id, Vgs: 690mOhm at 6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 44.2nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261664-STP12N120K5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 12A
Rds On (Maximum) at Id, Vgs: 690mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 44.2nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V

Buy Now
Single FETs, MOSFETs - 497-STP12N120K5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STP12N120K5-ND
Single FETs, MOSFETs 497-STP12N120K5-ND
N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-220

N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-220

Buy Now Datasheet
Mosfet, N-Ch, 1.2Kv, 12A, To-220Ab; Channel Type Stmicroelectronics - 45AC7690 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 12A, To-220Ab; Channel Type Stmicroelectronics
45AC7690
Mosfet, N-Ch, 1.2Kv, 12A, To-220Ab; Channel Type Stmicroelectronics 45AC7690
MOSFET, N-CH, 1.2KV, 12A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 12A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP12N120K5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP12N120K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP12N120K5
MOSFET N-CH 1200V 12A TO220

MOSFET N-CH 1200V 12A TO220

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STP12N120K5
MOSFET STP12N120K5
MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package

MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP12N120K5 1261664-STP12N120K5 497-STP12N120K5-ND 45AC7690 STP12N120K5 STP12N120K5
Product Name Single FETs, MOSFETs FETs - Single - STP12N120K5 Single FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 12A, To-220Ab; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 1200 volts 1200 volts
IDSS 12000 milliamps 12000 milliamps
Unlock Full Specs
to access all available technical data