STMicroelectronics, Inc. Single FETs, MOSFETs STP11NM80

Description
N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-4369-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4369-5-ND
Single FETs, MOSFETs 497-4369-5-ND
N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220

N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP11NM80 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP11NM80
Single FETs, MOSFETs STP11NM80
MOSFET N-CH 800V 11A TO220AB

MOSFET N-CH 800V 11A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM80 - 088832-STP11NM80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM80
088832-STP11NM80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM80 088832-STP11NM80
Manufacturer: STMicroelectronics Win Source Part Number: 088832-STP11NM80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 43.6nC @ 10V Max Input Capacitance: 1630pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 088832-STP11NM80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 43.6nC @ 10V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 6875235 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6875235
MOSFETs 6875235
MOSFET N-Channel 800V 11A MDMESH TO220

MOSFET N-Channel 800V 11A MDMESH TO220

Supplier's Site
MOSFETs - 6875235P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6875235P
MOSFETs 6875235P
MOSFET N-Channel 800V 11A MDMESH TO220

MOSFET N-Channel 800V 11A MDMESH TO220

Supplier's Site
MOSFETs - 9208852 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9208852
MOSFETs 9208852
MOSFET N-Channel 800V 11A MDMESH TO220

MOSFET N-Channel 800V 11A MDMESH TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11NM80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11NM80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11NM80
MOSFET N-CH 800V 11A TO220AB

MOSFET N-CH 800V 11A TO220AB

Supplier's Site
Mosfet, N, To-220; Channel Type Stmicroelectronics - 38K7917 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-220; Channel Type Stmicroelectronics
38K7917
Mosfet, N, To-220; Channel Type Stmicroelectronics 38K7917
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W RoHS Compliant: Yes

MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-4369-5-ND STP11NM80 088832-STP11NM80 6875235 6875235P STP11NM80 STP11NM80 38K7917
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM80 MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, To-220; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; To-220 TO-220; TO-220 TO-220; TO-220-3 TO-3; TO-220
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
IDSS 11000 milliamps 11000 milliamps
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