800V 11A N-CH MOSFET TO-220 400mR Rds(on) Product overview: STP11NM80 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 11A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 11A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP11NM80 can be used for catalog matching and distributor lookup.
MOSFET N-Channel 800V 11A MDMESH TO220
MOSFET N-Channel 800V 11A MDMESH TO220
MOSFET N-Channel 800V 11A MDMESH TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 088832-STP11NM80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 43.6nC @ 10V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 5.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 11A TO220AB
N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220
MOSFET N-CH 800V 11A TO220AB
MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STP11NM80 | 6875235 | 6875235P | 088832-STP11NM80 | STP11NM80 | 497-4369-5-ND | STP11NM80 | STP11NM80 | 38K7917 |
| Product Name | 800V 11A TO-220 MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM80 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N, To-220; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | ||||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Package Type | TO-220; To-220 | TO-220; TO-220 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 |
