STMicroelectronics, Inc. Single FETs, MOSFETs STP11NM60FDFP

Description
N-Channel 600V 11A (Tc) 35W (Tc) Through Hole TO-220FP
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Description
N-Channel 600V 11A (Tc) 35W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-5392-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5392-5-ND
Single FETs, MOSFETs 497-5392-5-ND
N-Channel 600V 11A (Tc) 35W (Tc) Through Hole TO-220FP

N-Channel 600V 11A (Tc) 35W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FDFP - 037738-STP11NM60FDFP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FDFP
037738-STP11NM60FDFP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FDFP 037738-STP11NM60FDFP
Manufacturer: STMicroelectronics Win Source Part Number: 037738-STP11NM60FDFP Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 900pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): SPA11N65C3; R6015ANX; STP11NM60FDFP; STF18N60M2(045Y); Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 037738-STP11NM60FDFP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): SPA11N65C3; R6015ANX; STP11NM60FDFP; STF18N60M2(045Y);
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 11 Amp

MOSFET N-Ch 600 Volt 11 Amp

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11NM60FDFP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11NM60FDFP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11NM60FDFP
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-5392-5-ND 037738-STP11NM60FDFP STP11NM60FDFP STP11NM60FDFP
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FDFP MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
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