STMicroelectronics, Inc. Single FETs, MOSFETs STP11NM60FD

Description
N-Channel 600V 11A (Tc) 160W (Tc) Through Hole TO-220
  • Single FETs, MOSFETs - 497-3180-5-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FD - 038495-STP11NM60FD - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STP11NM60FD - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11NM60FD - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type Stmicroelectronics - 45AC7688 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 600V 11A (Tc) 160W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-3180-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-3180-5-ND
Single FETs, MOSFETs 497-3180-5-ND
N-Channel 600V 11A (Tc) 160W (Tc) Through Hole TO-220

N-Channel 600V 11A (Tc) 160W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FD - 038495-STP11NM60FD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FD
038495-STP11NM60FD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FD 038495-STP11NM60FD
Manufacturer: STMicroelectronics Win Source Part Number: 038495-STP11NM60FD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 900pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): AOT11S65L; STP13NM60ND; STP11NM60FD; STP18N60M2; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 038495-STP11NM60FD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): AOT11S65L; STP13NM60ND; STP11NM60FD; STP18N60M2;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STP11NM60FD - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP11NM60FD
Single FETs, MOSFETs STP11NM60FD
MOSFET N-CH 600V 11A TO220AB

MOSFET N-CH 600V 11A TO220AB

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STP11NM60FD
MOSFET STP11NM60FD
MOSFET N-Ch 600 Volt 11 Amp

MOSFET N-Ch 600 Volt 11 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11NM60FD - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11NM60FD
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11NM60FD
MOSFET N-CH 600V 11A TO220AB

MOSFET N-CH 600V 11A TO220AB

Supplier's Site
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type Stmicroelectronics - 45AC7688 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type Stmicroelectronics
45AC7688
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type Stmicroelectronics 45AC7688
MOSFET, N-CH, 600V, 11A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 11A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-3180-5-ND 038495-STP11NM60FD STP11NM60FD STP11NM60FD STP11NM60FD 45AC7688
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM60FD Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220FP TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
V(BR)DSS 600 volts 600 volts
PD 35000 milliwatts 160000 milliwatts
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