STMicroelectronics, Inc. Single FETs, MOSFETs STP11NM50N

Description
N-Channel 500V 8.5A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 500V 8.5A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10576-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10576-5-ND
Single FETs, MOSFETs 497-10576-5-ND
N-Channel 500V 8.5A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 500V 8.5A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM50N - 1001057-STP11NM50N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM50N
1001057-STP11NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM50N 1001057-STP11NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 1001057-STP11NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 547pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 470 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1001057-STP11NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 547pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 470 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11NM50N
MOSFET N-CH 500V 8.5A TO220AB

MOSFET N-CH 500V 8.5A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10576-5-ND 1001057-STP11NM50N STP11NM50N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NM50N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 500 volts
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