STMicroelectronics, Inc. Single FETs, MOSFETs STP11NK50Z

Description
MOSFET N-CH 500V 10A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 500V 10A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP11NK50Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP11NK50Z
Single FETs, MOSFETs STP11NK50Z
MOSFET N-CH 500V 10A TO220AB

MOSFET N-CH 500V 10A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NK50Z - 091204-STP11NK50Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NK50Z
091204-STP11NK50Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NK50Z 091204-STP11NK50Z
Manufacturer: STMicroelectronics Win Source Part Number: 091204-STP11NK50Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STP11NK50 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 1390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 520 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): MDP13N50GTH; MDP13N50TH; 2SK3068(Q); 2SK3068(T4LMBSSM,Q; Introduction Date: July 05, 2002 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 091204-STP11NK50Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: STP11NK50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1390pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 520 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): MDP13N50GTH; MDP13N50TH; 2SK3068(Q); 2SK3068(T4LMBSSM,Q;
Introduction Date: July 05, 2002
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-12604-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12604-5-ND
Single FETs, MOSFETs 497-12604-5-ND
N-Channel 500V 10A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 500V 10A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
MOSFETs - 4857456 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
4857456
MOSFETs 4857456
MOSFET N-Channel 500V 10A TO220

MOSFET N-Channel 500V 10A TO220

Supplier's Site
MOSFETs - 4857456P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
4857456P
MOSFETs 4857456P
MOSFET N-Channel 500V 10A TO220

MOSFET N-Channel 500V 10A TO220

Supplier's Site
MOSFETs - 1686101 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1686101
MOSFETs 1686101
MOSFET N-Channel 500V 10A TO220

MOSFET N-Channel 500V 10A TO220

Supplier's Site
Mosfet, N, To-220; Channel Type Stmicroelectronics - 26M3668 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-220; Channel Type Stmicroelectronics
26M3668
Mosfet, N, To-220; Channel Type Stmicroelectronics 26M3668
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:125W RoHS Compliant: Yes

MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:125W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP11NK50Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP11NK50Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP11NK50Z
MOSFET N-CH 500V 10A TO220AB

MOSFET N-CH 500V 10A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH

MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP11NK50Z 091204-STP11NK50Z 497-12604-5-ND 4857456 4857456P 26M3668 STP11NK50Z STP11NK50Z
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP11NK50Z Single FETs, MOSFETs MOSFETs MOSFETs Mosfet, N, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 10000 milliamps 10000 milliamps
PD 125000 milliwatts 30000 milliwatts 125000 milliwatts
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