N-channel 80 V, 0.0056 Ohm typ.,
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Product overview: STP110N8F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 0.0056 Ohm, 110 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 0.0056 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP110N8F6 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 092704-STP110N8F6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: STP110N8F6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 9130pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 55A, 10V
Alternative Parts (Cross-Reference): IPP80N07S405AKSA1; IPP054NE8N GXK; IPP054NE8N G; IPP06CNE8N GXK;
Introduction Date: December 05, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2034
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220
MOSFET N-CH 80V 110A TO220
MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP110N8F6 | 278-STP110N8F6 | 092704-STP110N8F6 | 497-16019-5-ND | STP110N8F6 | STP110N8F6 |
| Product Name | Single FETs, MOSFETs | N-Channel 80 V 0.0056 Ohm 110 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP110N8F6 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||
| IDSS | 110000 milliamps |
