STMicroelectronics, Inc. Single FETs, MOSFETs STP10N60M2

Description
N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13970-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13970-5-ND
Single FETs, MOSFETs 497-13970-5-ND
N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220

N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10N60M2 - 1103620-STP10N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10N60M2
1103620-STP10N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10N60M2 1103620-STP10N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1103620-STP10N60M2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13.5nC @ 10V Max Input Capacitance: 400pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103620-STP10N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.5nC @ 10V
Max Input Capacitance: 400pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet, N-Ch, 600V, 7.5A, To-220Ab; Channel Type Stmicroelectronics - 45AC7683 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.5A, To-220Ab; Channel Type Stmicroelectronics
45AC7683
Mosfet, N-Ch, 600V, 7.5A, To-220Ab; Channel Type Stmicroelectronics 45AC7683
MOSFET, N-CH, 600V, 7.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP10N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP10N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP10N60M2
MOSFET N-CH 600V 7.5A TO220

MOSFET N-CH 600V 7.5A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13970-5-ND 1103620-STP10N60M2 45AC7683 STP10N60M2 STP10N60M2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP10N60M2 Mosfet, N-Ch, 600V, 7.5A, To-220Ab; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 600 volts
PD 85000 milliwatts
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