STMicroelectronics, Inc. Single FETs, MOSFETs STP100N10F7

Description
N-Channel 100V 80A (Tc) 150W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 100V 80A (Tc) 150W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13550-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13550-5-ND
Single FETs, MOSFETs 497-13550-5-ND
N-Channel 100V 80A (Tc) 150W (Tc) Through Hole TO-220

N-Channel 100V 80A (Tc) 150W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP100N10F7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP100N10F7
Single FETs, MOSFETs STP100N10F7
MOSFET N CH 100V 80A TO-220

MOSFET N CH 100V 80A TO-220

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP100N10F7 - 212343-STP100N10F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP100N10F7
212343-STP100N10F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP100N10F7 212343-STP100N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 212343-STP100N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 4369pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): IPP072N10N3G; BUK9510-100B,127; H7N1002AB; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212343-STP100N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 4369pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IPP072N10N3G; BUK9510-100B,127; H7N1002AB;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 100V 80A TO-220 MOSFET Transistor
278-STP100N10F7
N-Channel 100V 80A TO-220 MOSFET Transistor 278-STP100N10F7
100V 80A N-Channel MOSFET TO-220 8mR Rds(on) Product overview: STP100N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP100N10F7 can be used for catalog matching and distributor lookup.

100V 80A N-Channel MOSFET TO-220 8mR Rds(on) Product overview: STP100N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP100N10F7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W

MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W

Buy Now Datasheet
Mosfet, N-Ch, 100V, 80A, To-220-3; Transistor Polarity Stmicroelectronics - 98Y2496 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 80A, To-220-3; Transistor Polarity Stmicroelectronics
98Y2496
Mosfet, N-Ch, 100V, 80A, To-220-3; Transistor Polarity Stmicroelectronics 98Y2496
MOSFET, N-CH, 100V, 80A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 80A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 110293109 - Radwell International
Willingboro, NJ, United States
Transistor
110293109
Transistor 110293109
POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 100V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, MOSFET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 100V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, MOSFET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP100N10F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP100N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP100N10F7
MOSFET N CH 100V 80A TO-220

MOSFET N CH 100V 80A TO-220

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 497-13550-5-ND STP100N10F7 212343-STP100N10F7 278-STP100N10F7 STP100N10F7 98Y2496 110293109 STP100N10F7
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP100N10F7 N-Channel 100V 80A TO-220 MOSFET Transistor MOSFET Mosfet, N-Ch, 100V, 80A, To-220-3; Transistor Polarity Stmicroelectronics Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 80000 milliamps 80000 milliamps
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