MOSFET N CH 100V 80A TO-220
N-Channel 100V 80A (Tc) 150W (Tc) Through Hole TO-220
POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 100V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, MOSFET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: STMicroelectronics
Win Source Part Number: 212343-STP100N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 4369pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IPP072N10N3G; BUK9510-100B,127; H7N1002AB;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
MOSFET N CH 100V 80A TO-220
MOSFET, N-CH, 100V, 80A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
| ODG (Origin Data Global) | DigiKey | Radwell International | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP100N10F7 | 497-13550-5-ND | 110293109 | 212343-STP100N10F7 | STP100N10F7 | 98Y2496 | STP100N10F7 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP100N10F7 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 80A, To-220-3; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 80000 milliamps | 80000 milliamps | |||||
| PD | 150000 milliwatts | 150000 milliwatts |
