N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 package Product overview: STN6N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 1.00 Ohm, 5.5 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 1.00 Ohm, 5.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STN6N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 5.5A (Tc) 6W (Tc) Surface Mount SOT-223-2
N-Channel 600V 5.5A (Tc) 6W (Tc) Surface Mount SOT-223-2
N-Channel 600V 5.5A (Tc) 6W (Tc) Surface Mount SOT-223-2
Win Source Part Number: 1112944-STN6N60M2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M2
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Tc)
Package / Case: TO-261-3
Supplier Device Package: SOT-223-2
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STN6N60M2DKR,497
Base Product Number: STN6
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 5.5A SOT223-2
MOSFET N-CH 600V 5.5A SOT223-2
MOSFET, N-CH, 600V, 5.5A, SOT-223 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STN6N60M2 | 2049959 | 2049959P | 497-STN6N60M2CT-ND | 1112944-STN6N60M2 | STN6N60M2 | STN6N60M2 | 82AH9150 |
| Product Name | N-Channel 600 V 1.00 Ohm 5.5 A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 5.5A, Sot-223 Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Package Type | SOT223; Sot223-2 | SOT223; SOT-223 | TO-261-3 | SOT3 | SOT223; TO-261-3 | TO-261-3 | TO-3; SOT223 | |
| Number of units in IC | 1 | |||||||
| PD | 6000 milliwatts | 6000 milliwatts |
