MOSFET N-CH 60V 4A SOT-223
Manufacturer: STMicroelectronics
Win Source Part Number: 031447-STN4NF06L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Tc)
Family Name: STN4NF06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): NTF3055-100T3; NDT3055-Q; NDT3055_NL; NTF3055-100T1;
Introduction Date: April 22, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Ch MOSFET, 60V, 4A, 70mR Rds(on), SOT-223 Product overview: STN4NF06L from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STN4NF06L can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 60V, 4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 60V 4A SOT-223
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STN4NF06L | 031447-STN4NF06L | 497-10315-2-ND | 278-STN4NF06L | 51AC9586 | STN4NF06L | STN4NF06L |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN4NF06L | Single FETs, MOSFETs | 60V 4A MOSFET Transistor | Mosfet, N-Ch, 60V, 4A, Sot-223; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 4000 milliamps | 4000 milliamps | |||||
| PD | 3300 milliwatts | 3300 milliwatts | 3300 milliwatts |
