N-Ch 60V 4A 100mR Power MOSFET SOT-223 Product overview: STN3NF06L from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STN3NF06L can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 4A SOT223
Manufacturer: STMicroelectronics
Win Source Part Number: 094085-STN3NF06L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Tc)
Family Name: STN3NF06L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): NTF3055-100T1; MMFT3055VT1G; ZXMN6A09GTA;
Introduction Date: January 09, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223
Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
60V 4A 100mΩ@10V,1.5A 3.3W 2.8V@250uA N Channel SOT-223-4 MOSFETs ROHS
MOSFET, N-CH, 60V, 4A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 4A, SOT-223, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 60V 4A SOT223
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Rochester Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 4857399 | 4857399P | 278-STN3NF06L | STN3NF06L | 094085-STN3NF06L | 497-3177-2-ND | STN3NF06L | STN3NF06L | 72K6052 | 57P1526 | STN3NF06L | STN3NF06L |
| Product Name | MOSFETs | MOSFETs | 60V 4A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN3NF06L | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 60V, 4A, Sot-223; Channel Type Stmicroelectronics | N Channel Mosfet, 60V, 4A, Sot-223, Full Reel; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||||||
| Package Type | SOT223; Sot-223 | SOT223; SOT-223 | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223 | SOT223; TO-261-4, TO-261AA | SOT 223 - 4 | SOT223 | TO-3; SOT223 | TO-3; SOT223 | TO-261-4, TO-261AA | ||
| Number of units in IC | 1 | |||||||||||
| PD | 3300 milliwatts | 3300 milliwatts | 3300 milliwatts | 3300 milliwatts |
