MOSFET N-CH 100V 2.4A SOT-223
Manufacturer: STMicroelectronics
Win Source Part Number: 031445-STN2NF10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Tc)
Family Name: STN2NF10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 260 mOhm @ 1.2A, 10V
Alternative Parts (Cross-Reference): BSP372-T&R; BSP372GEG; BSP373 E6327NT; BSP372 L6327;
Introduction Date: December 17, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
MOSFET N-Channel 100V 2.4A SOT223
N-Ch MOSFET, 100V, 2.4A, 260mR, SOT-223 Product overview: STN2NF10 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 2.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STN2NF10 can be used for catalog matching and distributor lookup.
N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223
N CHANNEL MOSFET, 100V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):230mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:4 RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 2A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
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MOSFET N-CH 100V 2.4A SOT-223
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STN2NF10 | 031445-STN2NF10 | 4862149 | 4862149P | 278-STN2NF10 | 497-8023-6-ND | 88K0266 | 57P1524 | STN2NF10 | STN2NF10 | STN2NF10 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NF10 | MOSFETs | MOSFETs | 100V 2.4A MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 100V, 2A, Sot-223; Transistor Polarity Stmicroelectronics | N Channel Mosfet, 100V, 2A, Sot-223; Channel Type Stmicroelectronics | MOSFET N-CH 100V 2.4A SOT-223 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 100 volts | 100 volts | |||||||||
| IDSS | 2400 milliamps | 2000 milliamps | 2000 milliamps | ||||||||
| PD | 3300 milliwatts | 3300 milliwatts | 3300 milliwatts |
