STMicroelectronics, Inc. Single FETs, MOSFETs STN2NE10L

Description
N-Channel 100V 1.8A (Tc) 2.5W (Tc) Surface Mount SOT-223
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Description
N-Channel 100V 1.8A (Tc) 2.5W (Tc) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - STN2NE10L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STN2NE10L-ND
Single FETs, MOSFETs STN2NE10L-ND
N-Channel 100V 1.8A (Tc) 2.5W (Tc) Surface Mount SOT-223

N-Channel 100V 1.8A (Tc) 2.5W (Tc) Surface Mount SOT-223

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10L - 053908-STN2NE10L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10L
053908-STN2NE10L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10L 053908-STN2NE10L
Manufacturer: STMicroelectronics Win Source Part Number: 053908-STN2NE10L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 345pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 053908-STN2NE10L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 345pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STN2NE10L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STN2NE10L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STN2NE10L
MOSFET N-CH 100V 1.8A SOT-223

MOSFET N-CH 100V 1.8A SOT-223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STN2NE10L-ND 053908-STN2NE10L STN2NE10L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223 TO-261-4, TO-261AA
V(BR)DSS 100 volts
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