STMicroelectronics, Inc. Single FETs, MOSFETs STN2NE10

Description
N-Channel 100V 2A (Tc) 2.5W (Tc) Surface Mount SOT-223
Request a Quote Datasheet
Description
N-Channel 100V 2A (Tc) 2.5W (Tc) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - STN2NE10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STN2NE10-ND
Single FETs, MOSFETs STN2NE10-ND
N-Channel 100V 2A (Tc) 2.5W (Tc) Surface Mount SOT-223

N-Channel 100V 2A (Tc) 2.5W (Tc) Surface Mount SOT-223

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10 - 1103591-STN2NE10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10
1103591-STN2NE10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10 1103591-STN2NE10
Manufacturer: STMicroelectronics Win Source Part Number: 1103591-STN2NE10 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 305pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103591-STN2NE10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 305pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STN2NE10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STN2NE10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STN2NE10
MOSFET N-CH 100V 2A SOT-223

MOSFET N-CH 100V 2A SOT-223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STN2NE10-ND 1103591-STN2NE10 STN2NE10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STN2NE10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223 TO-261-4, TO-261AA
V(BR)DSS 100 volts
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