The STN1NK60Z is an N-channel 600 V Power MOSFET with a maximum continuous drain current of 0.3 A, designed for switching applications. It is housed in a SOT-223 package and features a typical on-resistance of 13 Ω at 10 V gate-source voltage, Zener-protected gate, and 100% avalanche tested reliability. The device supports a peak drain current of 1.2 A, with a gate-source breakdown voltage of 30 V and a maximum junction temperature of 150 °C. Thermal resistance junction-to-ambient is 38 °C/W when mounted on a 1 inch² FR-4 board with 2 Oz Cu. It meets ECOPACK® environmental standards and is 800 V HBM ESD rated. Its packaging is tape and reel.
N CH MOSFET, 600V, 300mA, SOT-223, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2W RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 28AC3404 |
| Product Name | N Ch Mosfet, 600V, 300Ma, Sot-223, Full Reel; Channel Type Stmicroelectronics |
| IDSS | 300 milliamps |