P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerFlat™ (3.3x3.3)
P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerFlat™ (3.3x3.3)
P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerFlat™ (3.3x3.3)
P-Ch -30V -9A 12mΩ MOSFET PowerFLAT 3.3x3.3 Product overview: STL9P3LLH6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, -9A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -9A, PowerFLAT, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL9P3LLH6 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 9A POWERFLAT
Manufacturer: STMicroelectronics
Win Source Part Number: 808382-STL9P3LLH6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerFlat (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 3W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 15mOhm at 4.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 24nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 2615pF at 25V
Current - Continuous Drain (Id) at 25°C: 9A (Tc)
Vgs(th) (Maximum) at Id: 1V at 250μA
Part Number Series: STL9
Maximum Vgs: ±20V
MOSFET P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
MOSFET P-CH 30V 9A POWERFLAT
MOSFET, P-CH, -30V, -9A, 150DEG C, 3W; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-17897-1-ND | 278-STL9P3LLH6 | STL9P3LLH6 | 808382-STL9P3LLH6 | STL9P3LLH6 | STL9P3LLH6 | 26AH0200 |
| Product Name | Single FETs, MOSFETs | -30V -9A PowerFLAT MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STL9P3LLH6 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -9A, 150Deg C, 3W; Transistor Polarity Stmicroelectronics |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | 8-PowerVDFN | 8-PowerVDFN | SOT3 | 8-PowerVDFN | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | ||||||
| IDSS | 9000 milliamps | -9000 milliamps |
