STMicroelectronics, Inc. Single FETs, MOSFETs STL9P2UH7

Description
P-Channel 20V 9A (Tc) 2.9W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
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Description
P-Channel 20V 9A (Tc) 2.9W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 497-15147-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15147-2-ND
Single FETs, MOSFETs 497-15147-2-ND
P-Channel 20V 9A (Tc) 2.9W (Tc) Surface Mount PowerFlat™ (3.3x3.3)

P-Channel 20V 9A (Tc) 2.9W (Tc) Surface Mount PowerFlat™ (3.3x3.3)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL9P2UH7 - 1103211-STL9P2UH7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL9P2UH7
1103211-STL9P2UH7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL9P2UH7 1103211-STL9P2UH7
Manufacturer: STMicroelectronics Win Source Part Number: 1103211-STL9P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.9W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PowerFlat (3.3x3.3) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 22nC @ 4.5V Max Input Capacitance: 2390pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22.5 mOhm @ 4.5A, 4.5V Alternative Parts (Cross-Reference): IRFHM9391TRPBF; STL9P3LLH6; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1103211-STL9P2UH7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PowerFlat (3.3x3.3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Max Input Capacitance: 2390pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 22.5 mOhm @ 4.5A, 4.5V
Alternative Parts (Cross-Reference): IRFHM9391TRPBF; STL9P3LLH6;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL9P2UH7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL9P2UH7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL9P2UH7
MOSFET P-CH 20V 9A POWERFLAT

MOSFET P-CH 20V 9A POWERFLAT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-15147-2-ND 1103211-STL9P2UH7 STL9P2UH7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL9P2UH7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type 8-PowerVDFN SOT3; PowerFlat (3.3x3.3) 8-PowerVDFN
V(BR)DSS 20 volts
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