STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL8P2UH7 STL8P2UH7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103208-STL8P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PowerFlat (2x2) Dimension: 6-PowerWDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 22nC @ 4.5V Max Input Capacitance: 2390pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22.5 mOhm @ 4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103208-STL8P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PowerFlat (2x2) Dimension: 6-PowerWDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 22nC @ 4.5V Max Input Capacitance: 2390pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22.5 mOhm @ 4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL8P2UH7 - 1103208-STL8P2UH7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL8P2UH7
1103208-STL8P2UH7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL8P2UH7 1103208-STL8P2UH7
Manufacturer: STMicroelectronics Win Source Part Number: 1103208-STL8P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PowerFlat (2x2) Dimension: 6-PowerWDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 22nC @ 4.5V Max Input Capacitance: 2390pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22.5 mOhm @ 4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1103208-STL8P2UH7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PowerFlat (2x2)
Dimension: 6-PowerWDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 22nC @ 4.5V
Max Input Capacitance: 2390pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 22.5 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - 497-14997-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14997-2-ND
Single FETs, MOSFETs 497-14997-2-ND
P-Channel 20V 8A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)

P-Channel 20V 8A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - STL8P2UH7 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STL8P2UH7
Single FETs, MOSFETs STL8P2UH7
MOSFET P-CH 20V 8A POWERFLAT

MOSFET P-CH 20V 8A POWERFLAT

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL8P2UH7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL8P2UH7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL8P2UH7
MOSFET P-CH 20V 8A POWERFLAT

MOSFET P-CH 20V 8A POWERFLAT

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1103208-STL8P2UH7 497-14997-2-ND STL8P2UH7 STL8P2UH7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL8P2UH7 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts
PD 2400 milliwatts 2400 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data