STMicroelectronics, Inc. Single FETs, MOSFETs STL7NM60N

Description
MOSFET N-CH 600V 5.8A 14PWRFLAT
Request a Quote Datasheet
Description
MOSFET N-CH 600V 5.8A 14PWRFLAT
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STL7NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STL7NM60N
Single FETs, MOSFETs STL7NM60N
MOSFET N-CH 600V 5.8A 14PWRFLAT

MOSFET N-CH 600V 5.8A 14PWRFLAT

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7NM60N - 053878-STL7NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7NM60N
053878-STL7NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7NM60N 053878-STL7NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 053878-STL7NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 14-PowerFLAT (5x5) Dimension: 14-PowerVQFN Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 363pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 053878-STL7NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 14-PowerFLAT (5x5)
Dimension: 14-PowerVQFN
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 363pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-11043-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11043-2-ND
Single FETs, MOSFETs 497-11043-2-ND
N-Channel 600V 5.8A (Tc) 68W (Tc) Surface Mount 14-PowerFLAT™ (5x5)

N-Channel 600V 5.8A (Tc) 68W (Tc) Surface Mount 14-PowerFLAT™ (5x5)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL7NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL7NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL7NM60N
MOSFET N-CH 600V 5.8A 14PWRFLAT

MOSFET N-CH 600V 5.8A 14PWRFLAT

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number STL7NM60N 053878-STL7NM60N 497-11043-2-ND STL7NM60N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7NM60N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 5800 milliamps
Unlock Full Specs
to access all available technical data

Similar Products