N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Product overview: STL4N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 0.062 Ohm, 4.5 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 0.062 Ohm, 4.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL4N10F7 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261331-STL4N10F7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerFlat (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.9W, 50W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 4.5A, 18A
Rds On (Maximum) at Id, Vgs: 70mOhm at 2.25A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 7.8nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 408pF at 50V
N-Channel 100V 4.5A (Ta), 18A (Tc) 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 100V 4.5A (Ta), 18A (Tc) 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 100V 4.5A (Ta), 18A (Tc) 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
MOSFET N-CH 100V 4.5/18A PWRFLAT
MOSFET, N-CH, 100V, 4.5A, POWERFLAT ROHS COMPLIANT: YES
MOSFET N-CH 100V 4.5/18A PWRFLAT
MOSFET N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STL4N10F7 | 1261331-STL4N10F7 | 497-14989-6-ND | STL4N10F7 | 47AK6976 | STL4N10F7 | STL4N10F7 |
| Product Name | N-Channel 100 V 0.062 Ohm 4.5 A MOSFET Transistor | FETs - Single - STL4N10F7 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 4.5A, Powerflat Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 2900 milliwatts | 2900 to 50000 milliwatts | 2900 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts |
