600V N-CH MOSFET, 2.2A, 1.8 Ohm, Surface Mount Product overview: STL3NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 2.2A, 1.8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 2.2A, 1.8 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL3NM60N can be used for catalog matching and distributor lookup.
N-Channel 600V 650mA (Ta), 2.2A (Tc) 2W (Ta), 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 600V 650mA (Ta), 2.2A (Tc) 2W (Ta), 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 600V 650mA (Ta), 2.2A (Tc) 2W (Ta), 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
MOSFET N-CH 600V 0.65A POWERFLAT
Manufacturer: STMicroelectronics
Win Source Part Number: 1261329-STL3NM60N
Series: MDmesh II
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc)
Family Name: STL3NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerFlat (3.3x3.3)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 9.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 188pF @ 50V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 2W (Ta), 22W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): 4N65L-K08-3030-R; 4N65G-K08-3030-R;
Introduction Date: March 14, 2012
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 600V, 2.2A, POWERFLAT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 0.65A POWERFLAT
MOSFET N-Ch 600V 1.5Ohm 2.2A MDMesh II MOS
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 151422 | 278-STL3NM60N | 497-13351-1-ND | STL3NM60N | 1261329-STL3NM60N | 98Y2481 | STL3NM60N | STL3NM60N |
| Product Name | MOSFETs | SMD 600V 2.2A 1.8 Ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL3NM60N | Mosfet, N-Ch, 600V, 2.2A, Powerflat-8; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | PowerFLAT (3.3 x 3.3) HV | 8-PowerVDFN | 8-PowerVDFN | SOT3 | TO-3 | 8-PowerVDFN | ||
| PD | 22000 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
