N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package Product overview: STL3N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 1.6 Ohm, 2.3 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 1.6 Ohm, 2.3 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL3N65M2 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278077-STL3N65M2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M2
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 22W (Tc)
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18738-6,497-1873
Base Product Number: STL3
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 650V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
N-Channel 650V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
MOSFET N-CH 650V 2.3A POWERFLAT
MOSFET, N-CH, 650V, 2.3A, 150DEG C, 22W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 2.3A POWERFLAT
MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STL3N65M2 | 1278077-STL3N65M2 | 497-18738-2-ND | STL3N65M2 | 26AH0191 | STL3N65M2 | STL3N65M2 |
| Product Name | N-Channel 650 V 1.6 Ohm 2.3 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 2.3A, 150Deg C, 22W; Transistor Polarity Stmicroelectronics | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT3 | 8-PowerVDFN | 8-PowerVDFN | TO-3 | 8-PowerVDFN | ||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| IDSS | 2300 milliamps | 2300 milliamps | |||||
| rDS(on) | 1.6 ohms |
