STMicroelectronics, Inc. Single FETs, MOSFETs STL22N65M5

N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV

N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV

N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV

650V N-CH MOSFET, 15A, 210mR, PowerFLAT 8x8 HV Product overview: STL22N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 15A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 15A, PowerFLAT, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL22N65M5 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261319-STL22N65M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerFlat (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.8W, 110W
Alternative Parts (Cross-Reference): IPL60R199CP; STL34N65M5;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 15A
Rds On (Maximum) at Id, Vgs: 210mOhm at 8.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V