N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV
N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV
N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV
Manufacturer: STMicroelectronics
Win Source Part Number: 1261319-STL22N65M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerFlat (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 2.8W, 110W
Alternative Parts (Cross-Reference): IPL60R199CP; STL34N65M5;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 15A
Rds On (Maximum) at Id, Vgs: 210mOhm at 8.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V
MOSFET N-CH 650V 15A PWRFLAT HV
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| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-STL22N65M5CT-ND | 1261319-STL22N65M5 | STL22N65M5 | STL22N65M5 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STL22N65M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | 4-PowerVDFN | SOT3 | 8-PowerVDFN | |
| V(BR)DSS | 650 volts |