STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL220N3LLH7 STL220N3LLH7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103188-STL220N3LLH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 113W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerFlat (5x6) Dimension: 8-PowerSMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 220A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 46nC @ 4.5V Max Input Capacitance: 8650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103188-STL220N3LLH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 113W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerFlat (5x6) Dimension: 8-PowerSMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 220A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 46nC @ 4.5V Max Input Capacitance: 8650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL220N3LLH7 - 1103188-STL220N3LLH7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL220N3LLH7
1103188-STL220N3LLH7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL220N3LLH7 1103188-STL220N3LLH7
Manufacturer: STMicroelectronics Win Source Part Number: 1103188-STL220N3LLH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 113W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerFlat (5x6) Dimension: 8-PowerSMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 220A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 46nC @ 4.5V Max Input Capacitance: 8650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1103188-STL220N3LLH7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 113W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerFlat (5x6)
Dimension: 8-PowerSMD, Flat Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 220A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 46nC @ 4.5V
Max Input Capacitance: 8650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1103188-STL220N3LLH7 497-14968-2-ND STL220N3LLH7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL220N3LLH7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 113000 milliwatts
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