STMicroelectronics, Inc. Single FETs, MOSFETs STL19N65M5

MOSFET N-CH 650V 12.5A POWERFLAT

N-channel 650 V, 0.215 Ohm typ., 12.5 A MDmesh M5 power MOSFET in a PowerFLAT 8x8 HV package Product overview: STL19N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.215 Ohm, 12.5 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.215 Ohm, 12.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL19N65M5 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261317-STL19N65M5
Series: MDmesh V
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: 4-PowerFlat HV
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
Family Name: STL19N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerFlat (8x8) HV
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1240pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 2.8W (Ta), 90W (Tc)
Rds On (Maximum) @ Id, Vgs: 240 mOhm @ 7.5A, 10V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited