STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL160N3LLH6 STL160N3LLH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 053866-STL160N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PowerFlat (5x6) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 61.5nC @ 4.5V Max Input Capacitance: 6375pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 mOhm @ 17.5A, 10V Alternative Parts (Cross-Reference): IRFH8307TRPBF; STL160NS3LLH7; STL160N3LLH6; RS1E350GNTB; Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 053866-STL160N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PowerFlat (5x6) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 61.5nC @ 4.5V Max Input Capacitance: 6375pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 mOhm @ 17.5A, 10V Alternative Parts (Cross-Reference): IRFH8307TRPBF; STL160NS3LLH7; STL160N3LLH6; RS1E350GNTB; Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL160N3LLH6 - 053866-STL160N3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL160N3LLH6
053866-STL160N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL160N3LLH6 053866-STL160N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 053866-STL160N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PowerFlat (5x6) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 61.5nC @ 4.5V Max Input Capacitance: 6375pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 mOhm @ 17.5A, 10V Alternative Parts (Cross-Reference): IRFH8307TRPBF; STL160NS3LLH7; STL160N3LLH6; RS1E350GNTB; Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 053866-STL160N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerFlat (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 160A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 61.5nC @ 4.5V
Max Input Capacitance: 6375pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.3 mOhm @ 17.5A, 10V
Alternative Parts (Cross-Reference): IRFH8307TRPBF; STL160NS3LLH7; STL160N3LLH6; RS1E350GNTB;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-11204-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11204-2-ND
Single FETs, MOSFETs 497-11204-2-ND
N-Channel 30V 160A (Tc) 136W (Tc) Surface Mount PowerFlat™ (5x6)

N-Channel 30V 160A (Tc) 136W (Tc) Surface Mount PowerFlat™ (5x6)

Buy Now Datasheet
Mosfet, N Ch, 30V, 160A, Powerflat; Channel Type Stmicroelectronics - 47T9315 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 160A, Powerflat; Channel Type Stmicroelectronics
47T9315
Mosfet, N Ch, 30V, 160A, Powerflat; Channel Type Stmicroelectronics 47T9315
MOSFET, N CH, 30V, 160A, POWERFLAT; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:160A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CH, 30V, 160A, POWERFLAT; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:160A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL160N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL160N3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL160N3LLH6
MOSFET N-CH 30V 160A POWERFLAT

MOSFET N-CH 30V 160A POWERFLAT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI

MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 053866-STL160N3LLH6 497-11204-2-ND 47T9315 STL160N3LLH6 STL160N3LLH6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL160N3LLH6 Single FETs, MOSFETs Mosfet, N Ch, 30V, 160A, Powerflat; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 136000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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