STMicroelectronics FET, MOSFET Arrays STL13DP10F6

Description
MOSFET 2P-CH 100V 13A PWRFLAT56
Request a Quote Datasheet
Description
MOSFET 2P-CH 100V 13A PWRFLAT56
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - STL13DP10F6 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
STL13DP10F6
FET, MOSFET Arrays STL13DP10F6
MOSFET 2P-CH 100V 13A PWRFLAT56

MOSFET 2P-CH 100V 13A PWRFLAT56

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL13DP10F6 - 1261310-STL13DP10F6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL13DP10F6
1261310-STL13DP10F6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL13DP10F6 1261310-STL13DP10F6
Manufacturer: STMicroelectronics Win Source Part Number: 1261310-STL13DP10F6 Series: DeepGATE, STripFET VI Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerVDFN Mounting: SMD FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 13A Power - Max: 62.5W Family Name: STL13DP10F6 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.st.com Manufacturer Package: PowerFlat (5x6) Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 864pF @ 25V Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 1.7A, 10V ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261310-STL13DP10F6
Series: DeepGATE, STripFET VI
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 13A
Power - Max: 62.5W
Family Name: STL13DP10F6
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerFlat (5x6)
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 864pF @ 25V
Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 1.7A, 10V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL13DP10F6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL13DP10F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL13DP10F6
MOSFET 2P-CH 100V 13A POWERFLAT

MOSFET 2P-CH 100V 13A POWERFLAT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Dual P-channel 100 V, 0.136 Ohm typ., 3.3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 double island

MOSFET Dual P-channel 100 V, 0.136 Ohm typ., 3.3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 double island

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STL13DP10F6 1261310-STL13DP10F6 STL13DP10F6 STL13DP10F6
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL13DP10F6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; 2 P-Channel (Dual) P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
IDSS 13000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 448-AIMBG120R040M1XTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
2 suppliers
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor - TGF2929-FL - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers